collect compare
GT20N135SRA,S1E
Part number：
GT20N135SRA,S1E
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Toshiba Semiconductor and Storage
describe：
IGBT 1350V 40A TO-247
package：
Tube
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 1609
minimum : 1
quantity
unit price
price
1
3.77
3.77
10
2.84
28.4
30
2.57
77.1
120
2.33
279.6
270
2.23
602.1
510
2.16
1101.6
1020
2.1
2142
2520
2.04
5140.8
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    312 W
  • Operating Temperature
    175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247
  • Voltage - Collector Emitter Breakdown (Max)
    1350 V
  • Current - Collector (Ic) (Max)
    40 A
  • Input Type
    Standard
  • IGBT Type
    -
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 40A
  • Test Condition
    300V, 40A, 39Ohm, 15V
  • Current - Collector Pulsed (Icm)
    80 A
  • Switching Energy
    -, 700µJ (off)
  • Gate Charge
    185 nC
  • Td (on/off) @ 25°C
    -
  • +86-755-82564498

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